Publications

ResearcherID : C-5956-2008 (TY, h-index: 23) , AAZ-8749-2021 (RK, h-index: 6)
Google Scholar : TY (h-index: 32), RK (h-index: 7)

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2019

Takashi Yatsui

Recent improvement of silicon absorption in opto-electric devices Journal Article

In: Opto-Electronic Advances, 2 (10), pp. 190023, 2019, (review article, selected as cover story).

Abstract | Links | BibTeX | Tags: Direct wave-vector excitation, First, First principle calculation, Indirect band gap, Near-field effect, Plasmon, Review, Si

Enhanced photo-sensitivity in a Si photodetector using a near-field assisted excitation

Takashi Yatsui, Syunsuke Okada, Tatsuya Takemori, Takumi Sato, Kota Saichi, Tatsuro Ogamoto, Shohei Chiashi, Shigeo Maruyama, Masashi Noda, Kazuhiro Yabana, Kenji Iida, Katsuyuki Nobusada

Enhanced photo-sensitivity in a Si photodetector using a near-field assisted excitation Journal Article

In: Communications Physics, 2 , pp. 62, 2019.

Abstract | Links | BibTeX | Tags: Direct wave-vector excitation, First, Selected, Si photodetector

Direct Wave-Vector Excitation in an Indirect-Band-Gap Semiconductor of Silicon with an Optical Near-field

Masashi Noda, Kenji Iida, Maiku Yamaguchi, Takashi Yatsui, Katsuyuki Nobusada

Direct Wave-Vector Excitation in an Indirect-Band-Gap Semiconductor of Silicon with an Optical Near-field Journal Article

In: Phys. Rev. Applied, 11 (4), pp. 044053, 2019.

Abstract | Links | BibTeX | Tags: Direct wave-vector excitation, Si