Publications
ResearcherID : C-5956-2008 (TY, h-index: 23) , AAZ-8749-2021 (RK, h-index: 6)
Google Scholar : TY (h-index: 32), RK (h-index: 7)
2019
Takashi Yatsui, Syunsuke Okada, Tatsuya Takemori, Takumi Sato, Kota Saichi, Tatsuro Ogamoto, Shohei Chiashi, Shigeo Maruyama, Masashi Noda, Kazuhiro Yabana, Kenji Iida, Katsuyuki Nobusada
Enhanced photo-sensitivity in a Si photodetector using a near-field assisted excitation Journal Article
In: Communications Physics, 2 , pp. 62, 2019.
Abstract | Links | BibTeX | Tags: Direct wave-vector excitation, First, Selected, Si photodetector
@article{yatsui2019Si,
title = {Enhanced photo-sensitivity in a Si photodetector using a near-field assisted excitation},
author = {Takashi Yatsui and Syunsuke Okada and Tatsuya Takemori and Takumi Sato and Kota Saichi and Tatsuro Ogamoto and Shohei Chiashi and Shigeo Maruyama and Masashi Noda and Kazuhiro Yabana and Kenji Iida and Katsuyuki Nobusada},
doi = {10.1038/s42005-019-0173-1},
year = {2019},
date = {2019-06-01},
journal = {Communications Physics},
volume = {2},
pages = {62},
publisher = {Springer Nature},
abstract = {Silicon is an indispensable material in electric device technology. However, Si is an indirect bandgap material; therefore, its excitation efficiency, which requires phonon assistance, is low under propagating far-field light. To improve the excitation efficiency, herein we performed optical near-field excitation, which is confined in a nano-scale, where the interband transitions between different wave numbers are excited according to the uncertainty principle; thus, optical near-field can directly excite the carrier in the indirect bandgap. To evaluate the effect of optical near-field confined in a nano-scale, we fabricate the lateral Si p-n junction with Au nanoparticles as sources to generate the field confinement. We observed a 47.0 % increase in the photo-sensitivity rate. In addition, by using the thin lateral p-n junction, which eliminates the far-field excitation, we confirmed a 42.3 % increase in the photo-sensitivity rate.},
keywords = {Direct wave-vector excitation, First, Selected, Si photodetector},
pubstate = {published},
tppubtype = {article}
}
Silicon is an indispensable material in electric device technology. However, Si is an indirect bandgap material; therefore, its excitation efficiency, which requires phonon assistance, is low under propagating far-field light. To improve the excitation efficiency, herein we performed optical near-field excitation, which is confined in a nano-scale, where the interband transitions between different wave numbers are excited according to the uncertainty principle; thus, optical near-field can directly excite the carrier in the indirect bandgap. To evaluate the effect of optical near-field confined in a nano-scale, we fabricate the lateral Si p-n junction with Au nanoparticles as sources to generate the field confinement. We observed a 47.0 % increase in the photo-sensitivity rate. In addition, by using the thin lateral p-n junction, which eliminates the far-field excitation, we confirmed a 42.3 % increase in the photo-sensitivity rate.