Publications
ResearcherID : C-5956-2008 (TY, h-index: 25) , AAZ-8749-2021 (RK, h-index: 11)
Google Scholar : TY (h-index: 34), RK (h-index: 12)
2009
Yatsui, Takashi, Ohtsu, Motoichi
Production of size-controlled Si nanocrystals using self-organized optical near-field chemical etching Journal Article
In: Applied Physics Letters, vol. 95, no. 4, pp. 043104, 2009.
Abstract | Links | BibTeX | タグ: First, Nanophotonic fabrication, Near-field effect, Self-assembly, Si
@article{doi:10.1063/1.3193536,
title = {Production of size-controlled Si nanocrystals using self-organized optical near-field chemical etching},
author = {Takashi Yatsui and Motoichi Ohtsu},
doi = {10.1063/1.3193536},
year = {2009},
date = {2009-07-24},
urldate = {2009-07-24},
journal = {Applied Physics Letters},
volume = {95},
number = {4},
pages = {043104},
abstract = {We demonstrate the selective photochemical etching of Si in a self-organized manner, which strongly depends on the distribution of the optical near field. This dependence was described by the virtual exciton-phonon-polariton model. The photoluminescence (PL) spectra from the etched Si exhibited a blueshifted PL peak at 1.8 eV, corresponding to Si nanocrystals of 2.8 nm diameter.},
keywords = {First, Nanophotonic fabrication, Near-field effect, Self-assembly, Si},
pubstate = {published},
tppubtype = {article}
}
We demonstrate the selective photochemical etching of Si in a self-organized manner, which strongly depends on the distribution of the optical near field. This dependence was described by the virtual exciton-phonon-polariton model. The photoluminescence (PL) spectra from the etched Si exhibited a blueshifted PL peak at 1.8 eV, corresponding to Si nanocrystals of 2.8 nm diameter.
2007
Yatsui, Takashi, Kawazoe, Tadashi, Kobayashi, Kiyoshi, Ohtsu, Motoichi
Near-field components and evaluation of photoluminescence in silicon nanostructures Journal Article
In: Journal of Nanophotonics, vol. 1, no. 1, pp. 011570, 2007.
Abstract | Links | BibTeX | タグ: First, Non-uniform optical near field, Si, silicon
@article{10.1117/1.2794355,
title = {Near-field components and evaluation of photoluminescence in silicon nanostructures},
author = {Takashi Yatsui and Tadashi Kawazoe and Kiyoshi Kobayashi and Motoichi Ohtsu},
doi = {10.1117/1.2794355},
year = {2007},
date = {2007-09-01},
journal = {Journal of Nanophotonics},
volume = {1},
number = {1},
pages = {011570},
publisher = {SPIE},
abstract = {Using illumination-collection mode optical near-field spectroscopy, a a spectral shift of photoluminescence of silicon (Si) nanocrystals compared with the far-field measurement was observed, due to the near-field coupling of the Si nanocrystals and the probe.},
keywords = {First, Non-uniform optical near field, Si, silicon},
pubstate = {published},
tppubtype = {article}
}
Using illumination-collection mode optical near-field spectroscopy, a a spectral shift of photoluminescence of silicon (Si) nanocrystals compared with the far-field measurement was observed, due to the near-field coupling of the Si nanocrystals and the probe.
Yatsui, Takashi, Nomura, Wataru, Ohtsu, Motoichi
Metallized slit-shaped pyramidal Si probe with extremely high resolution for 1.5-Tbit/in2 density near-field optical storage Journal Article
In: Journal of Nanophotonics, vol. 1, no. 1, pp. 011550, 2007.
Abstract | Links | BibTeX | タグ: First, near-field optical recording, Optical storage, Si
@article{10.1117/1.2794357,
title = {Metallized slit-shaped pyramidal Si probe with extremely high resolution for 1.5-Tbit/in2 density near-field optical storage},
author = {Takashi Yatsui and Wataru Nomura and Motoichi Ohtsu},
url = {https://doi.org/10.1117/1.2794357},
doi = {10.1117/1.2794357},
year = {2007},
date = {2007-09-01},
journal = {Journal of Nanophotonics},
volume = {1},
number = {1},
pages = {011550},
publisher = {SPIE},
abstract = {We have developed a near-field optical probe by introducing the metallized pyramidal structure of a Si probe with a slit-shaped tip for high-density optical storage. Numerical analysis using the finite-difference time-domain method showed that the optical spot generated at the aperture measured 13×30 nm. We fabricated a slit-type Si probe and evaluated the spot size using fluorescence imaging of a single dye molecule. The full-width at half maximum of the signal profiles was 16 nm×26 nm, which corresponds to a data density of 1.5 Tbit/in2. Furthermore, a large extinction coefficient depending on the polarization was confirmed.},
keywords = {First, near-field optical recording, Optical storage, Si},
pubstate = {published},
tppubtype = {article}
}
We have developed a near-field optical probe by introducing the metallized pyramidal structure of a Si probe with a slit-shaped tip for high-density optical storage. Numerical analysis using the finite-difference time-domain method showed that the optical spot generated at the aperture measured 13×30 nm. We fabricated a slit-type Si probe and evaluated the spot size using fluorescence imaging of a single dye molecule. The full-width at half maximum of the signal profiles was 16 nm×26 nm, which corresponds to a data density of 1.5 Tbit/in2. Furthermore, a large extinction coefficient depending on the polarization was confirmed.
2005
Yatsui, Kiyoshi, Gunji, Michiharu, Yang, Sung-Chae, Suematsu, Hisayuki, Jiang, Weihua, Yatsui, Takashi, Ohtsu, Motoichi
Blue Light Emission from Ultrafine Nanosized Powder of Silicon Produced by Intense Pulsed Ion-Beam Evaporation Journal Article
In: Japanese Journal of Applied Physics, vol. 44, no. 2, pp. L92-L94, 2005.
Abstract | Links | BibTeX | タグ: Si
@article{Yatsui_2004,
title = {Blue Light Emission from Ultrafine Nanosized Powder of Silicon Produced by Intense Pulsed Ion-Beam Evaporation},
author = {Kiyoshi Yatsui and Michiharu Gunji and Sung-Chae Yang and Hisayuki Suematsu and Weihua Jiang and Takashi Yatsui and Motoichi Ohtsu},
doi = {10.1143/jjap.44.l92},
year = {2005},
date = {2005-01-01},
journal = {Japanese Journal of Applied Physics},
volume = {44},
number = {2},
pages = {L92-L94},
publisher = {IOP Publishing},
abstract = {Blue light emission has been observed from ultrafine nanosized powder of silicon, which was synthesized by rapid cooling of high-density ablation plasma produced by intense pulsed light-ion beam interaction with a silicon target, called pulsed ion-beam evaporation. The emission appears from the powder without heat treatment after being synthesized. Furthermore, the emission is found to be very stable; neither red- nor blue-shift is observed. In fact, the spectrum from the powder four months after the synthesis is the same as those from as-synthesized powder. The rapid heat cooling inherent to ion-beam evaporation seems to be essential for emission.},
keywords = {Si},
pubstate = {published},
tppubtype = {article}
}
Blue light emission has been observed from ultrafine nanosized powder of silicon, which was synthesized by rapid cooling of high-density ablation plasma produced by intense pulsed light-ion beam interaction with a silicon target, called pulsed ion-beam evaporation. The emission appears from the powder without heat treatment after being synthesized. Furthermore, the emission is found to be very stable; neither red- nor blue-shift is observed. In fact, the spectrum from the powder four months after the synthesis is the same as those from as-synthesized powder. The rapid heat cooling inherent to ion-beam evaporation seems to be essential for emission.