Publications
ResearcherID : C-5956-2008 (TY, h-index: 23) , AAZ-8749-2021 (RK, h-index: 7)
Google Scholar : TY (h-index: 32), RK (h-index: 8)
2007
Takashi Yatsui, Wataru Nomura, Motoichi Ohtsu
Metallized slit-shaped pyramidal Si probe with extremely high resolution for 1.5-Tbit/in2 density near-field optical storage Journal Article
In: Journal of Nanophotonics, 1 (1), pp. 011550, 2007.
Abstract | Links | BibTeX | Tags: First, near-field optical recording, Optical storage, Si
@article{10.1117/1.2794357,
title = {Metallized slit-shaped pyramidal Si probe with extremely high resolution for 1.5-Tbit/in2 density near-field optical storage},
author = {Takashi Yatsui and Wataru Nomura and Motoichi Ohtsu},
url = {https://doi.org/10.1117/1.2794357},
doi = {10.1117/1.2794357},
year = {2007},
date = {2007-09-01},
journal = {Journal of Nanophotonics},
volume = {1},
number = {1},
pages = {011550},
publisher = {SPIE},
abstract = {We have developed a near-field optical probe by introducing the metallized pyramidal structure of a Si probe with a slit-shaped tip for high-density optical storage. Numerical analysis using the finite-difference time-domain method showed that the optical spot generated at the aperture measured 13×30 nm. We fabricated a slit-type Si probe and evaluated the spot size using fluorescence imaging of a single dye molecule. The full-width at half maximum of the signal profiles was 16 nm×26 nm, which corresponds to a data density of 1.5 Tbit/in2. Furthermore, a large extinction coefficient depending on the polarization was confirmed.},
keywords = {First, near-field optical recording, Optical storage, Si},
pubstate = {published},
tppubtype = {article}
}
We have developed a near-field optical probe by introducing the metallized pyramidal structure of a Si probe with a slit-shaped tip for high-density optical storage. Numerical analysis using the finite-difference time-domain method showed that the optical spot generated at the aperture measured 13×30 nm. We fabricated a slit-type Si probe and evaluated the spot size using fluorescence imaging of a single dye molecule. The full-width at half maximum of the signal profiles was 16 nm×26 nm, which corresponds to a data density of 1.5 Tbit/in2. Furthermore, a large extinction coefficient depending on the polarization was confirmed.
2002
Takashi Yatsui, Kazutaka Itsumi, Motonobu Kourogi, Motoichi Ohtsu
Metallized pyramidal silicon probe with extremely high throughput and resolution capability for optical near-field technology Journal Article
In: Applied Physics Letters, 80 (13), pp. 2257-2259, 2002.
Abstract | Links | BibTeX | Tags: First, near-field optical recording, Plasmon
@article{doi:10.1063/1.1465520,
title = {Metallized pyramidal silicon probe with extremely high throughput and resolution capability for optical near-field technology},
author = {Takashi Yatsui and Kazutaka Itsumi and Motonobu Kourogi and Motoichi Ohtsu},
doi = {10.1063/1.1465520},
year = {2002},
date = {2002-04-01},
journal = {Applied Physics Letters},
volume = {80},
number = {13},
pages = {2257-2259},
abstract = {An optical near-field probe with extremely high throughput and resolution capability was fabricated with a metallized pyramidal silicon structure. Using a finite-difference time-domain method, we found the tip parameters that are required for localized surface plasmon resonance at the probe tip. The optical near-field energy distribution on the metallized pyramidal silicon probe was observed by scanning a fiber probe that had an aperture diameter of 50 nm. The spatial distribution profile observed was in good agreement with the numerical results. The throughput and spot size were determined to be 2.3% and 85 nm, respectively.},
keywords = {First, near-field optical recording, Plasmon},
pubstate = {published},
tppubtype = {article}
}
An optical near-field probe with extremely high throughput and resolution capability was fabricated with a metallized pyramidal silicon structure. Using a finite-difference time-domain method, we found the tip parameters that are required for localized surface plasmon resonance at the probe tip. The optical near-field energy distribution on the metallized pyramidal silicon probe was observed by scanning a fiber probe that had an aperture diameter of 50 nm. The spatial distribution profile observed was in good agreement with the numerical results. The throughput and spot size were determined to be 2.3% and 85 nm, respectively.
2000
Takashi Yatsui, Motonobu Kourogi, Kazuo Tsutsui, Motoichi Ohtsu, Jun-ichi Takahashi
High-density-speed optical near-field recording--reading with a pyramidal silicon probe on a contact slider Journal Article
In: Optics Letters, 25 (17), pp. 1279-1281, 2000.
Abstract | Links | BibTeX | Tags: First, near-field optical recording, Plasmon
@article{Yatsui:00,
title = {High-density-speed optical near-field recording--reading with a pyramidal silicon probe on a contact slider},
author = {Takashi Yatsui and Motonobu Kourogi and Kazuo Tsutsui and Motoichi Ohtsu and Jun-ichi Takahashi},
doi = {10.1364/OL.25.001279},
year = {2000},
date = {2000-09-01},
journal = {Optics Letters},
volume = {25},
number = {17},
pages = {1279-1281},
publisher = {OSA},
abstract = {We demonstrate high-density-speed phase-change recording-reading by use of a pyramidal silicon structure. The contact slider, which has a pyramidal silicon probe array with height dispersion of less than 10 nm, is fabricated by use of a silicon-on-insulator wafer. By illumination with a laser beam λ=830 nm of one element of the probe array, we find the shortest phase-change mark length and the carrier-to-noise ratio to be 110 nm and 10 dB, respectively, corresponding to a data transmission rate of 2.0 MHz. This rate can be increased to 200 MHz by use of all elements of the probe array.},
keywords = {First, near-field optical recording, Plasmon},
pubstate = {published},
tppubtype = {article}
}
We demonstrate high-density-speed phase-change recording-reading by use of a pyramidal silicon structure. The contact slider, which has a pyramidal silicon probe array with height dispersion of less than 10 nm, is fabricated by use of a silicon-on-insulator wafer. By illumination with a laser beam λ=830 nm of one element of the probe array, we find the shortest phase-change mark length and the carrier-to-noise ratio to be 110 nm and 10 dB, respectively, corresponding to a data transmission rate of 2.0 MHz. This rate can be increased to 200 MHz by use of all elements of the probe array.
1999
Myung Bok Lee, Motonobu Kourogi, Takashi Yatsui, Kazuo Tsutsui, Nobufumi Atoda, Motoichi Ohtsu
Silicon planar-apertured probe array for high-density near-field optical storage Journal Article
In: Applied Optics, 38 (16), pp. 3566-3571, 1999.
Abstract | Links | BibTeX | Tags: near-field optical recording
@article{Lee:99,
title = {Silicon planar-apertured probe array for high-density near-field optical storage},
author = {Myung Bok Lee and Motonobu Kourogi and Takashi Yatsui and Kazuo Tsutsui and Nobufumi Atoda and Motoichi Ohtsu},
doi = {10.1364/AO.38.003566},
year = {1999},
date = {1999-06-01},
journal = {Applied Optics},
volume = {38},
number = {16},
pages = {3566-3571},
publisher = {OSA},
abstract = {We propose a novel, to our knowledge, silicon planar-aperturedprobe array as an optical head for high-density near-field opticalstorage. In comparison with a conventional fiber probe employed fornear-field optical storage the apertured probe array has a higherreadout data-transmission rate and better mechanical durability. Aprobe array with an aperture size of 100 nm was fabricated by use ofphotolithography and wet etching of a siliconwafer. Subwavelength-readout capability was demonstrated by use ofone aperture of the probe array. Furthermore, we achieved a 16times increase in the light-transmission efficiency of the probe arrayby installing glass-sphere microlenses on each aperture. Theincrease was confirmed by measurement of the near-field opticalintensity.},
keywords = {near-field optical recording},
pubstate = {published},
tppubtype = {article}
}
We propose a novel, to our knowledge, silicon planar-aperturedprobe array as an optical head for high-density near-field opticalstorage. In comparison with a conventional fiber probe employed fornear-field optical storage the apertured probe array has a higherreadout data-transmission rate and better mechanical durability. Aprobe array with an aperture size of 100 nm was fabricated by use ofphotolithography and wet etching of a siliconwafer. Subwavelength-readout capability was demonstrated by use ofone aperture of the probe array. Furthermore, we achieved a 16times increase in the light-transmission efficiency of the probe arrayby installing glass-sphere microlenses on each aperture. Theincrease was confirmed by measurement of the near-field opticalintensity.