Publications

ResearcherID : C-5956-2008 (TY, h-index: 24) , AAZ-8749-2021 (RK, h-index: 11)
Google Scholar : TY (h-index: 33), RK (h-index: 11)

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2019

Recent improvement of silicon absorption in opto-electric devices

Takashi Yatsui

Recent improvement of silicon absorption in opto-electric devices Journal Article

In: Opto-Electronic Advances, vol. 2, no. 10, pp. 190023, 2019, (review article, selected as cover story).

Abstract | Links | BibTeX | Tags: Direct wave-vector excitation, First, First principle calculation, Indirect band gap, Near-field effect, Plasmon, Review, Si

Enhanced photo-sensitivity in a Si photodetector using a near-field assisted excitation

Takashi Yatsui, Syunsuke Okada, Tatsuya Takemori, Takumi Sato, Kota Saichi, Tatsuro Ogamoto, Shohei Chiashi, Shigeo Maruyama, Masashi Noda, Kazuhiro Yabana, Kenji Iida, Katsuyuki Nobusada

Enhanced photo-sensitivity in a Si photodetector using a near-field assisted excitation Journal Article

In: Communications Physics, vol. 2, pp. 62, 2019.

Abstract | Links | BibTeX | Tags: Direct wave-vector excitation, First, Selected, Si photodetector

Direct Wave-Vector Excitation in an Indirect-Band-Gap Semiconductor of Silicon with an Optical Near-field

Masashi Noda, Kenji Iida, Maiku Yamaguchi, Takashi Yatsui, Katsuyuki Nobusada

Direct Wave-Vector Excitation in an Indirect-Band-Gap Semiconductor of Silicon with an Optical Near-field Journal Article

In: Phys. Rev. Applied, vol. 11, no. 4, pp. 044053, 2019.

Abstract | Links | BibTeX | Tags: Direct wave-vector excitation, Si