Publications
ResearcherID : C-5956-2008 (TY, h-index: 25) , AAZ-8749-2021 (RK, h-index: 11)
Google Scholar : TY (h-index: 34), RK (h-index: 12)
2006
Yatsui, Takashi, Nakajima, Yuuki, Nomura, Wataru, Ohtsu, Motoichi
High-resolution capability of optical near-field imprint lithography Journal Article
In: Applied Physics B, vol. 84, no. 1-2, pp. 265-267, 2006.
Abstract | Links | BibTeX | タグ: First, Imprint, Nanophotonic fabrication, Near-field effect
@article{2006yatsuiAPBimprint,
title = {High-resolution capability of optical near-field imprint lithography},
author = {Takashi Yatsui and Yuuki Nakajima and Wataru Nomura and Motoichi Ohtsu},
doi = {10.1007/s00340-006-2328-5},
year = {2006},
date = {2006-07-01},
journal = {Applied Physics B},
volume = {84},
number = {1-2},
pages = {265-267},
publisher = {Springer Nature},
abstract = {We propose a novel method to increase the resolution of imprint lithography by introducing strong localization of the optical near-field intensity, depending on the mold structure. By optimizing the thickness of the metallic film on a SiO2 line-and-space (LS) mold without a sidewall coating, we confirmed that the optical near-field strongly localizes at the edge of the mold, using a finite-difference time-domain calculation method. Based on the calculated results, we performed optical near-field imprint lithography using a mold with metallized (20-nm-thick Al without a sidewall coating) SiO2 LS with a 300-nm half-pitch that was 200-nm deep with illumination using the g-line (wavelength of 436 nm), and obtained features as narrow as 50 nm wide.},
keywords = {First, Imprint, Nanophotonic fabrication, Near-field effect},
pubstate = {published},
tppubtype = {article}
}
We propose a novel method to increase the resolution of imprint lithography by introducing strong localization of the optical near-field intensity, depending on the mold structure. By optimizing the thickness of the metallic film on a SiO2 line-and-space (LS) mold without a sidewall coating, we confirmed that the optical near-field strongly localizes at the edge of the mold, using a finite-difference time-domain calculation method. Based on the calculated results, we performed optical near-field imprint lithography using a mold with metallized (20-nm-thick Al without a sidewall coating) SiO2 LS with a 300-nm half-pitch that was 200-nm deep with illumination using the g-line (wavelength of 436 nm), and obtained features as narrow as 50 nm wide.