Publications

@article{2014Hai,

title = {High-field electroluminescence in semiconductor tunnel junctions with a Mn-doped GaAs layer},

author = {Pham Nam Hai and Takashi Yatsui and Motoichi Ohtsu and Masaaki Tanaka},

doi = {10.1063/1.4895700},

year  = {2014},

date = {2014-09-01},

urldate = {2014-09-01},

journal = {Journal of Applied Physics},

volume = {116},

number = {11},

pages = {113905},

abstract = {We investigated high-field electroluminescence (EL) in semiconductor tunnel junctions with a Mn-doped GaAs layer (here, referred to as GaAs:Mn). Besides the band-gap emission of GaAs, the EL spectra show visible light emissions with two peaks at 1.94 eV and 2.19 eV, which are caused by d-d transitions of the Mn atoms excited by hot electrons. The threshold voltages for band-gap and visible light EL in the tunnel junctions with a GaAs:Mn electrode are 1.3 V higher than those of GaAs:Mn excited by hot holes in reserve biased p+-n junctions, which is consistent with the hot carrier transport in the band profiles of these structures. Our EL results at room temperature show that the electron temperature in GaAs:Mn can be as high as ∼700 K for a low input electrical power density of 0.4 W/cm2, while the lattice temperature of the GaAs:Mn layer can be kept at 340 K.

I. INTRODUCTION},

keywords = {EL, GaAs:Mn},

pubstate = {published},

tppubtype = {article}

}